Basic Properties of Nd: YVO4
Atomic Density: | 1.26x1020 atoms/cm3 (Nd1.0%) |
Crystal Structure: | Zircon Tetragonal, space group D4h-I4/amd |
Density; | 4.22g/cm3 |
Mohs Hardness: | 4-5(Glass-like) |
Thermal Expansion Coefficient(300K): | αa=4.43x10-6/K |
Thermal Conductivity Coefficient(300K): | //C:0.0523W/cm/K |
Optical Properties of Nd:YVO4:
Lasing wavelength: | 1064nm,1342nm |
Thermal optical coefficient (300K): | dno/dT=8.5×10-6/K |
Stimulated emission cross-section: | 25×10-19cm2 @ 1064nm |
Fluorescent lifetime: | 90μs(1% Nd doping) |
Absorption coefficient: | 31.4cm-1 @810nm |
Intrinsic loss: | 0.02cm-1 @1064nm |
Gain bandwidth: | 0.96nm@1064nm |
Polarized laser emission: | π polarization; parallel to optic axis(c-axis) |
Diode pumped optical to optical efficiency: | >60% |
Sellemeier equations (λ in um) | n02=3.77834+0.069736/(λ2-0.04724)-0.010813λ2 ne2=4.59905+0.110534/(λ2-0.04813)-0.012676λ2 |
Nd:YVO4 Specifications:
● Dimension tolerance:(W±0.1mm)x(H±0.1mm)x(L+0.5/-0.1mm) (L≥2.5mm)
(W±0.1mm)x(H±0.1mm)x(L+0.2/-0.1mm) (L<2.5mm)
● Transmitting wavefront distortion:less than λ/4 @ 633nm
● Clear aperture:>90% central area
● Chamfer: ≤0.2mm@45
● Chip: ≤0.1mm
● Flatness: λ/8 @ 633 nm (L≥2.5mm), λ/4 @ 633nm (L<2.5mm)
● Scratch/Dig code: 10/5 to MIL-PRF-13830B
● Parallelism:better than 20 arc seconds
● Perpendicularity: ≤5 arc minutes
● Angle tolerance:≤0.5°
● Damage threshold[GW/cm2 ]: >1 for 1064nm, TEM00, 10ns, 10Hz (AR-coated)
Copyright © 2015 Rays Optics Co., Ltd. All rights reserved. Ji ICP for the preparation of 16001170-1 html